VBM1104N
Manufacturer:
VBsemi
Mfr.Part #:
VBM1104N
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 127 W 100 V Continuous Drain Current (ID):45 A 35 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 127 W |
| Number of Channels | 1 |
| Input capacitance | 2.4 nF |
| Continuous Drain Current (ID) | 45 A |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 32 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 1 V to 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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