VBM1206
Manufacturer:
VBsemi
Mfr.Part #:
VBM1206
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel 125 W 20 V Continuous Drain Current (ID):100 A 130 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Power Dissipation | 125 W |
| Input capacitance | 6 nF |
| Continuous Drain Current (ID) | 100 A |
| Gate Charge | 130 nC |
| Drain to Source Resistance | 4 mΩ |
| Gate to Source Voltage (Vgs) | -12 V, 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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