VBM1310
Manufacturer:
VBsemi
Mfr.Part #:
VBM1310
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 120 W 30 V Continuous Drain Current (ID):55 A 35 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 120 W |
| Number of Channels | 1 |
| Input capacitance | 2.201 nF |
| Continuous Drain Current (ID) | 55 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 10 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Gate to Source Threshold Voltage | 1 V to 2.5 V |
Stock: 28
Distributors
pcbx
pcbxUnit Price$0.48797
Ext.Price$0.48797
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.48797 | $0.48797 |
| 10 | $0.38419 | $3.84190 |
| 25 | $0.35960 | $8.99000 |
| 50 | $0.33658 | $16.82900 |
| 100 | $0.28343 | $28.34300 |
| 300 | $0.27037 | $81.11100 |
| 500 | $0.25792 | $128.96000 |
| 1000 | $0.24366 | $243.66000 |