VBM165R04
Manufacturer:
VBsemi
Mfr.Part #:
VBM165R04
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 60 W 650 V Continuous Drain Current (ID):4.5 A 48 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 60 W |
| Number of Channels | 1 |
| Input capacitance | 1.01 nF |
| Continuous Drain Current (ID) | 4.5 A |
| Gate Charge | 48 nC |
| Drain to Source Resistance | 1.7 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2.5 V to 4.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 19
Distributors
pcbx
pcbxUnit Price$0.39898
Ext.Price$0.39898
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.39898 | $0.39898 |
| 10 | $0.31027 | $3.10270 |
| 50 | $0.26717 | $13.35850 |
| 100 | $0.22155 | $22.15500 |
| 500 | $0.20031 | $100.15500 |
| 1000 | $0.18799 | $187.99000 |