VBM165R12
Manufacturer:
VBsemi
Mfr.Part #:
VBM165R12
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 106 W 650 V Continuous Drain Current (ID):12 A 43 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 106 W |
| Number of Channels | 1 |
| Input capacitance | 2.2 nF |
| Continuous Drain Current (ID) | 12 A |
| Gate Charge | 43 nC |
| Drain to Source Resistance | 58 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 55
Distributors
pcbx
pcbxUnit Price$0.82368
Ext.Price$0.82368
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.82368 | $0.82368 |
| 10 | $0.68582 | $6.85820 |
| 25 | $0.61368 | $15.34200 |
| 50 | $0.54912 | $27.45600 |
| 100 | $0.46900 | $46.90000 |
| 300 | $0.44933 | $134.79900 |
| 500 | $0.43049 | $215.24500 |
| 1000 | $0.41303 | $413.03000 |