VBM16R08
Manufacturer:
VBsemi
Mfr.Part #:
VBM16R08
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 170 W 600 V Continuous Drain Current (ID):8 A 49 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 170 W |
| Number of Channels | 1 |
| Input capacitance | 1.4 nF |
| Continuous Drain Current (ID) | 8 A |
| Gate Charge | 49 nC |
| Drain to Source Resistance | 800 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2
Distributors
pcbx
pcbxUnit Price$0.66749
Ext.Price$0.66749
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.66749 | $0.66749 |
| 10 | $0.53261 | $5.32610 |
| 25 | $0.49700 | $12.42500 |
| 50 | $0.46378 | $23.18900 |
| 100 | $0.40051 | $40.05100 |
| 300 | $0.38052 | $114.15600 |
| 500 | $0.36152 | $180.76000 |
| 1000 | $0.34076 | $340.76000 |