VBM2102M
Manufacturer:
VBsemi
Mfr.Part #:
VBM2102M
Datasheet:
Description:
MOSFETs TO-220AB Through Hole P-Channel number of channels:1 11.7 W -100 V Continuous Drain Current (ID):-18 A 100 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 11.7 W |
| Number of Channels | 1 |
| Input capacitance | 1.765 nF |
| Continuous Drain Current (ID) | -18 A |
| Gate Charge | 100 nC |
| Drain to Source Resistance | 180 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| Gate to Source Threshold Voltage | -1 V to -2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 4
Distributors
pcbx
pcbxUnit Price$0.50362
Ext.Price$0.50362
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.50362 | $0.50362 |
| 10 | $0.40877 | $4.08770 |
| 25 | $0.36864 | $9.21600 |
| 50 | $0.33245 | $16.62250 |
| 100 | $0.28867 | $28.86700 |
| 300 | $0.27465 | $82.39500 |
| 500 | $0.26132 | $130.66000 |
| 1000 | $0.24638 | $246.38000 |