VBM2610N
Manufacturer:
VBsemi
Mfr.Part #:
VBM2610N
Datasheet:
Description:
MOSFETs TO-220AB Through Hole P-Channel number of channels:1 60 W -60 V Continuous Drain Current (ID):-20 A 13 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 60 W |
| Number of Channels | 1 |
| Input capacitance | 850 pF |
| Continuous Drain Current (ID) | -20 A |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 100 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Gate to Source Threshold Voltage | -1 V to -3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2
Distributors
pcbx
pcbxUnit Price$0.60691
Ext.Price$0.60691
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.60691 | $0.60691 |
| 10 | $0.49411 | $4.94110 |
| 25 | $0.44486 | $11.12150 |
| 50 | $0.40051 | $20.02550 |
| 100 | $0.34765 | $34.76500 |
| 300 | $0.33054 | $99.16200 |
| 500 | $0.31428 | $157.14000 |
| 1000 | $0.29624 | $296.24000 |