VBM2625
Manufacturer:
VBsemi
Mfr.Part #:
VBM2625
Datasheet:
Description:
MOSFETs TO-220AB Through Hole P-Channel 104.2 W 60 V Continuous Drain Current (ID):120 A 115 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 104.2 W |
| Input capacitance | 3.5 nF |
| Continuous Drain Current (ID) | 120 A |
| Gate Charge | 115 nC |
| Drain to Source Resistance | 19 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | -3 V |
| FET Type(Transistor Polarity) | P-Channel |
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