VBMB165R02
Manufacturer:
VBsemi
Mfr.Part #:
VBMB165R02
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 25 W 650 V Continuous Drain Current (ID):2 A 11 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 25 W |
| Number of Channels | 1 |
| Input capacitance | 417 pF |
| Continuous Drain Current (ID) | 2 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 11 nC |
| Drain to Source Resistance | 4 Ω |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
Stock: 28
Distributors
pcbx
pcbxUnit Price$0.40512
Ext.Price$0.40512
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.40512 | $0.40512 |
| 10 | $0.31651 | $3.16510 |
| 50 | $0.27216 | $13.60800 |
| 100 | $0.22766 | $22.76600 |
| 500 | $0.20661 | $103.30500 |
| 1000 | $0.19293 | $192.93000 |