VBMB165R10
Manufacturer:
VBsemi
Mfr.Part #:
VBMB165R10
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 156 W 650 V Continuous Drain Current (ID):10 A 40 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 156 W |
| Number of Channels | 1 |
| Input capacitance | 1.9 nF |
| Continuous Drain Current (ID) | 10 A |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 820 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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