VBMB165R12
Manufacturer:
VBsemi
Mfr.Part #:
VBMB165R12
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 106 W 650 V Continuous Drain Current (ID):12 A 43 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 106 W |
| Number of Channels | 1 |
| Input capacitance | 1.6 nF |
| Continuous Drain Current (ID) | 12 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 43 nC |
| Drain to Source Resistance | 650 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 5 V |
Stock: 28
Distributors
pcbx
pcbxUnit Price$0.83107
Ext.Price$0.83107
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.83107 | $0.83107 |
| 10 | $0.69312 | $6.93120 |
| 25 | $0.63264 | $15.81600 |
| 50 | $0.57744 | $28.87200 |
| 100 | $0.49635 | $49.63500 |
| 300 | $0.47670 | $143.01000 |
| 500 | $0.45784 | $228.92000 |
| 1000 | $0.44038 | $440.38000 |