VBMB165R20S
Manufacturer:
VBsemi
Mfr.Part #:
VBMB165R20S
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 208 W 650 V Continuous Drain Current (ID):20 A 106 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 208 W |
| Number of Channels | 1 |
| Input capacitance | 2.32 nF |
| Continuous Drain Current (ID) | 20 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 106 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V |
Stock: 17
Distributors
pcbx
pcbxUnit Price$2.06093
Ext.Price$2.06093
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.06093 | $2.06093 |
| 10 | $1.74576 | $17.45760 |
| 25 | $1.60261 | $40.06525 |
| 50 | $1.47120 | $73.56000 |
| 100 | $1.28380 | $128.38000 |
| 300 | $1.23691 | $371.07300 |
| 500 | $1.19174 | $595.87000 |
| 1000 | $1.15197 | $1151.97000 |