VBMB2610N
Manufacturer:
VBsemi
Mfr.Part #:
VBMB2610N
Datasheet:
Description:
MOSFETs TO-220F Through Hole P-Channel number of channels:1 60 W -60 V Continuous Drain Current (ID):-25 A 13 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -40 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 60 W |
| Number of Channels | 1 |
| Input capacitance | 850 pF |
| Continuous Drain Current (ID) | -25 A |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 63 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Gate to Source Threshold Voltage | -1 V to -3 V |
| FET Type(Transistor Polarity) | P-Channel |
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