VBZE30N10
Manufacturer:
VBsemi
Mfr.Part #:
VBZE30N10
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 110 W 100 V Continuous Drain Current (ID):35 A 35 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 110 W |
| Number of Channels | 1 |
| Input capacitance | 4 nF |
| Continuous Drain Current (ID) | 35 A |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 30 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 1 V to 3 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 23
Distributors
pcbx
pcbxUnit Price$0.39130
Ext.Price$0.39130
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.39130 | $0.39130 |
| 10 | $0.38246 | $3.82460 |
| 25 | $0.38042 | $9.51050 |
| 50 | $0.37839 | $18.91950 |
| 100 | $0.37636 | $37.63600 |