VBZE80N10
Manufacturer:
VBsemi
Mfr.Part #:
VBZE80N10
Datasheet:
Description:
MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 83 W 100 V Continuous Drain Current (ID):25 A 21 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 83 W |
| Number of Channels | 1 |
| Input capacitance | 2.3 nF |
| Continuous Drain Current (ID) | 25 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 21 nC |
| Drain to Source Resistance | 55 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 0.8 V to 1.5 V |
Stock: 15
Distributors
pcbx
pcbxUnit Price$0.86256
Ext.Price$0.86256
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.86256 | $0.86256 |
| 10 | $0.70128 | $7.01280 |
| 25 | $0.64496 | $16.12400 |
| 50 | $0.59316 | $29.65800 |
| 100 | $0.54553 | $54.55300 |
| 300 | $0.52061 | $156.18300 |
| 500 | $0.49683 | $248.41500 |
| 1000 | $0.47239 | $472.39000 |