VBZFB50N03
Manufacturer:
VBsemi
Mfr.Part #:
VBZFB50N03
Datasheet:
Description:
MOSFETs TO-251 Through Hole N-Channel number of channels:1 28 W 30 V Continuous Drain Current (ID):50 A 33 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 28 W |
| Number of Channels | 1 |
| Input capacitance | 1.7 nF |
| Continuous Drain Current (ID) | 50 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 33 nC |
| Drain to Source Resistance | 15 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Gate to Source Threshold Voltage | 1.2 V |
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