VBZM80N04
Manufacturer:
VBsemi
Mfr.Part #:
VBZM80N04
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 200 W 40 V Continuous Drain Current (ID):110 A 130 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 200 W |
| Number of Channels | 1 |
| Input capacitance | 2.9 nF |
| Continuous Drain Current (ID) | 110 A |
| Gate Charge | 130 nC |
| Drain to Source Resistance | 6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 115
Distributors
pcbx
pcbxUnit Price$0.66480
Ext.Price$0.66480
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.66480 | $0.66480 |
| 10 | $0.53933 | $5.39330 |
| 25 | $0.48006 | $12.00150 |
| 50 | $0.42730 | $21.36500 |
| 100 | $0.36831 | $36.83100 |
| 300 | $0.34914 | $104.74200 |
| 500 | $0.33096 | $165.48000 |
| 1000 | $0.31224 | $312.24000 |