VBZM8N50
Manufacturer:
VBsemi
Mfr.Part #:
VBZM8N50
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 170 W 500 V Continuous Drain Current (ID):8 A 49 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 170 W |
| Number of Channels | 1 |
| Input capacitance | 1.4 nF |
| Continuous Drain Current (ID) | 8 A |
| Gate Charge | 49 nC |
| Drain to Source Resistance | 1.1 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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