VBZMB10N65
Manufacturer:
VBsemi
Mfr.Part #:
VBZMB10N65
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 53 W 650 V Continuous Drain Current (ID):10 A 57 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 53 W |
| Number of Channels | 1 |
| Input capacitance | 1.9 nF |
| Continuous Drain Current (ID) | 10 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 57 nC |
| Drain to Source Resistance | 900 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
Stock: 54
Distributors
pcbx
pcbxUnit Price$0.78922
Ext.Price$0.78922
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.78922 | $0.78922 |
| 10 | $0.65126 | $6.51260 |
| 25 | $0.60140 | $15.03500 |
| 50 | $0.55536 | $27.76800 |
| 100 | $0.47404 | $47.40400 |
| 300 | $0.45433 | $136.29900 |
| 500 | $0.43543 | $217.71500 |
| 1000 | $0.41933 | $419.33000 |