VBZMB4N65
Manufacturer:
VBsemi
Mfr.Part #:
VBZMB4N65
Datasheet:
Description:
MOSFETs TO-220F Through Hole N-Channel number of channels:1 30 W 650 V Continuous Drain Current (ID):4 A 48 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 30 W |
| Number of Channels | 1 |
| Input capacitance | 1.08 nF |
| Continuous Drain Current (ID) | 4 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 48 nC |
| Drain to Source Resistance | 2.5 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
Stock: 49
Distributors
pcbx
pcbxUnit Price$0.45744
Ext.Price$0.45744
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.45744 | $0.45744 |
| 10 | $0.37229 | $3.72290 |
| 25 | $0.35002 | $8.75050 |
| 50 | $0.32909 | $16.45450 |
| 100 | $0.29022 | $29.02200 |
| 300 | $0.27702 | $83.10600 |
| 500 | $0.26442 | $132.21000 |
| 1000 | $0.25172 | $251.72000 |