SI1922EDH-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI1922EDH-T1-GE3
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT N-Channel number of channels:2 740 mW 20 V Continuous Drain Current (ID):1.3 A 2.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 1.1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Max Power Dissipation | 1.25 W |
| Power Dissipation | 740 mW |
| Threshold Voltage | 400 mV |
| Number of Channels | 2 |
| Continuous Drain Current (ID) | 1.3 A |
| Rds On Max | 198 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 22 ns |
| Turn-Off Delay Time | 645 ns |
| Element Configuration | Dual |
| Fall Time | 220 ns |
| Rise Time | 80 ns |
| Gate Charge | 2.5 nC |
| Drain to Source Resistance | 165 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 8929
Distributors
pcbx
pcbxUnit Price$0.36933
Ext.Price$0.36933
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.36933 | $0.36933 |
| 10 | $0.22741 | $2.27410 |
| 50 | $0.18287 | $9.14350 |
| 100 | $0.14705 | $14.70500 |
| 500 | $0.11200 | $56.00000 |
| 1000 | $0.10259 | $102.59000 |
| 3000 | $0.07951 | $238.53000 |
| 5000 | $0.07597 | $379.85000 |
| 10000 | $0.07259 | $725.90000 |