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SI8817DB-T2-E1

Manufacturer:

Vishay

Mfr.Part #:

SI8817DB-T2-E1

Datasheet:
Description:

MOSFETs XFBGA-4 SMD/SMT P-Channel number of channels:1 900 mW -20 V Continuous Drain Current (ID):2.9 A 19 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins4
PackagingReel
Radiation HardeningNo
RoHSCompliant
Number of Elements1
Max Power Dissipation500 mW
Power Dissipation900 mW
Number of Channels1
Input capacitance615 pF
Continuous Drain Current (ID)2.9 A
Rds On Max76 mΩ
Drain to Source Voltage (Vdss)20 V
FET Type(Transistor Polarity)P-Channel
Element ConfigurationSingle
Gate Charge19 nC
Drain to Source Resistance76 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541210080
Gate to Source Threshold Voltage1 V

Stock: 39051

Distributors
pcbx
Unit Price$0.36334
Ext.Price$0.36334
QtyUnit PriceExt.Price
1$0.36334$0.36334
10$0.26503$2.65030
50$0.21917$10.95850
100$0.18124$18.12400
500$0.13764$68.82000
1000$0.12226$122.26000
3000$0.08635$259.05000
5000$0.08327$416.35000