
| Parameter | Value | 
|---|---|
| Gate Charge | 57 nC | 
| Gate to Source Threshold Voltage | 3 V to 5 V | 
| Continuous Drain Current (ID) | 20 A | 
| Max Operating Temperature | 150 °C | 
| Min Operating Temperature | -55 °C | 
| Drain to Source Resistance | 400 mΩ | 
| Input capacitance | 5.15 nF | 
| Gate to Source Voltage (Vgs) | -30 V, 30 V | 
| Power Dissipation | 80 W | 
| Drain to Source Breakdown Voltage (Vds) | 650 V | 
| Number of Channels | 1 | 
| Packaging | Tube | 
| RoHS | Compliant | 
| FET Type(Transistor Polarity) | N-Channel | 
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