| Parameter | Value |
|---|---|
| Width | 25.4 mm |
| Termination | Solder |
| Max Operating Temperature | 80 °C |
| Min Operating Temperature | -25 °C |
| Number of Pins | 4 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Approvals | UL |
| Output Voltage | 10 V |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Output Type | Phototransistor |
| Lifecycle Status | Production (Last Updated: 8 months ago) |
| Power Dissipation | 100 mW |
| Body Material | ABS |
| Response Time | 30 µs |
| Number of Channels | 1 |
| Max Collector Current | 20 mA |
| Collector Emitter Breakdown Voltage | 30 V |
| Output Configuration | Phototransistor |
| Fall Time | 30 µs |
| Rise Time | 30 µs |
| Wavelength | 850 nm |
| Collector Emitter Voltage (VCEO) | 30 V |
| Input Current | 30 mA |
| Reverse Breakdown Voltage | 4 V |
| Sensing Distance | 5 mm |
| Max Input Current | 30 mA |
| Max Output Voltage | 10 V |
| Reverse Voltage (DC) | 4 V |
| Schedule B | 8541408000 |
| RoHS | Compliant |
| Packaging | Bulk |
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