Parameter | Value |
---|---|
Max Operating Temperature | 85 °C |
Min Operating Temperature | -25 °C |
Number of Pins | 4 |
Forward Current | 20 mA |
Power Dissipation | 75 mW |
Max Output Current | 100 nA |
Response Time | 15 µs |
Max Collector Current | 20 mA |
Collector Emitter Breakdown Voltage | 30 V |
Output Configuration | Phototransistor |
Fall Time | 15 µs |
Rise Time | 15 µs |
Wavelength | 940 nm |
Collector Emitter Voltage (VCEO) | 30 V |
Sensing Distance | 3.9878 mm |
RoHS | Compliant |
Packaging | Bulk |
Sensing Method | Through-Beam |
Out of Stock
Distributors
--
Unit Price$--
Ext.Price$--
Qty | Unit Price | Ext.Price |
---|---|---|
No data |