| Parameter | Value |
|---|---|
| Max Operating Temperature | 85 °C |
| Min Operating Temperature | -25 °C |
| Number of Pins | 4 |
| Forward Current | 20 mA |
| Output Type | Phototransistor |
| Max Power Dissipation | 75 mW |
| Response Time | 15 µs |
| Number of Channels | 1 |
| Max Collector Current | 20 mA |
| Collector Emitter Breakdown Voltage | 30 V |
| Output Configuration | Phototransistor |
| Fall Time | 15 µs |
| Rise Time | 15 µs |
| Wavelength | 940 nm |
| Collector Emitter Voltage (VCEO) | 30 V |
| Sensing Distance | 5.0038 mm |
| Schedule B | 8541409500 |
| RoHS | Compliant |
| Packaging | Bulk |
| Sensing Method | Through-Beam |
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